The TSM085P03CS RLG is an advanced P-Channel MOSFET designed for high-efficiency power management and switching applications. It features low Rds(on) to minimize conduction losses, robust voltage tolerance, and is optimized for use in DC-DC converters and battery protection circuits.
Taiwan Semiconductor TSM085P03CS RLG technical specifications.
| Drain to Source Voltage | -30V |
| Continuous Drain Current | -34A |
| RDS(on) (max) | 8.5mΩ |
| Gate-Source Voltage | ±20V |
| Total Gate Charge | 63nC |
| Power Dissipation | 3.1W |
| RoHS | Compliant |
| Halogen-free | Compliant |
No datasheet is available for this part.
