The TSM120N06LCR is an N-channel silicon MOSFET designed for high-efficiency power conversion. It features low on-resistance and is optimized for switching and power management applications. It is rated for a drain-source voltage of 60V and a continuous drain current of 54A.
Taiwan Semiconductor TSM120N06LCR RLG technical specifications.
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 54A |
| Static Drain-Source On-Resistance (RDS(on)) Max | 0.012Ω |
| Total Gate Charge (Qg) | 36.5nC |
| Power Dissipation (PD) | 69W |
| Operating Junction Temperature | -55 to +150°C |
| Gate-Source Threshold Voltage (VGS(th)) | 1.2 to 2.5V |
| RoHS | Compliant |
| Halogen Free | Compliant |
No datasheet is available for this part.
