The TSM150P04LCS is a P-Channel enhancement mode power field effect transistor produced using Taiwan Semiconductor's advanced trench technology. It is designed to provide high switching speed and low on-resistance, making it suitable for high-efficiency power management, load switching, and DC-DC converter applications. The device is housed in a standard 8-pin SOP package and is optimized for low gate charge and excellent thermal performance.
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Technical Specifications
Taiwan Semiconductor TSM150P04LCS RLG technical specifications.
General
| Drain-Source Voltage (Vdss) | -40V |
| Continuous Drain Current (Id) @ Tc=25°C | -22A |
| Drain-Source On-State Resistance (Rds On) @ Vgs=-10V | 15mΩ |
| Drain-Source On-State Resistance (Rds On) @ Vgs=-4.5V | 21mΩ |
| Gate-Source Threshold Voltage (Vgs th) | -1.0 to -2.5V |
| Total Gate Charge (Qg) @ Vgs=-10V | 48nC |
| Input Capacitance (Ciss) | 2783pF |
| Power Dissipation (Pd) @ Tc=25°C | 12.5W |
| Operating Junction Temperature | -55 to +150°C |
| Moisture Sensitivity Level (MSL) | 1 |
Compliance
| RoHS | RoHS3 Compliant |
| Halogen-free | Yes |
| REACH | REACH Unaffected |
Datasheet
Taiwan Semiconductor TSM150P04LCS RLG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM150P04LCS RLG to view detailed technical specifications.
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