TSM2305CX is a P-Channel Power MOSFET produced using high-density cell design and advanced trench process technology to achieve ultra-low on-resistance. It is designed for high efficiency and reliability in compact power management applications.
Temp Range-55 to +150°C
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Technical Specifications
Taiwan Semiconductor TSM2305CX RFG technical specifications.
General
| Drain-Source Voltage (VDS) | -20V |
| Continuous Drain Current (ID) | -3.3A |
| Drain-Source On-State Resistance (RDS(on) @ VGS=-4.5V) | 55mΩ |
| Drain-Source On-State Resistance (RDS(on) @ VGS=-2.5V) | 80mΩ |
| Gate-Source Voltage (VGS) | ±8V |
| Total Gate Charge (Qg) | 12.7nC |
| Power Dissipation (PD) | 1.25W |
| Operating Temperature Range | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| REACH | Compliant |
Datasheet
Taiwan Semiconductor TSM2305CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2305CX RFG to view detailed technical specifications.
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