The TSM2318CX RFG is an N-channel Power MOSFET utilizing advanced trench process technology to achieve high density cell design and ultra-low on-resistance. It is optimized for DC-DC power systems and load switching applications, providing high efficiency and reliable performance in a compact SOT-23 package.
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Technical Specifications
Taiwan Semiconductor TSM2318CX RFG technical specifications.
General
| Drain-Source Voltage (Vdss) | 40V |
| Continuous Drain Current (Id) | 3.9A |
| RDS(on) Max (Vgs=10V) | 45mΩ |
| RDS(on) Max (Vgs=4.5V) | 51mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Total Gate Charge (Qg) | 9.1nC |
| Power Dissipation (Pd) | 1.25W |
| Operating Junction Temperature | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Taiwan Semiconductor TSM2318CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2318CX RFG to view detailed technical specifications.
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