The TSM2323CX RFG is a P-Channel MOSFET utilizing advanced trench process technology. It features a high density cell design for ultra-low on-resistance. It is optimized for efficient power management in space-constrained applications.
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Technical Specifications
Taiwan Semiconductor TSM2323CX RFG technical specifications.
General
| Drain-Source Voltage (Vdss) | -20V |
| Continuous Drain Current (Id) | -4.7A |
| Static Drain-Source On-Resistance (RDS(on)) @ Vgs=4.5V | 39mΩ |
| Static Drain-Source On-Resistance (RDS(on)) @ Vgs=2.5V | 52mΩ |
| Total Gate Charge (Qg) | 13.6nC |
| Gate-Source Voltage (Vgs) | ±8V |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Taiwan Semiconductor TSM2323CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2323CX RFG to view detailed technical specifications.
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