The TSM250N02DCQ RFG is a high-performance, dual N-channel power MOSFET designed for low-voltage power management. It features a drain-source breakdown voltage of 20V and a continuous drain current rating of 5.8A. The device is housed in a compact 6-VDFN exposed pad package, optimized for high-speed switching, low-noise operation, and efficient heat dissipation in portable and consumer electronics applications.
Taiwan Semiconductor TSM250N02DCQ RFG technical specifications.
| Drain to Source Voltage (Vdss) | 20V |
| Continuous Drain Current (Id) | 5.8A |
| Rds(on) max @ Vgs=4.5V | 25mΩ |
| Rds(on) max @ Vgs=2.5V | 35mΩ |
| Rds(on) max @ Vgs=1.8V | 50mΩ |
| Total Gate Charge (Qg) typ. | 7.7nC |
| Power Dissipation (Pd) | 1.56W |
| Configuration | Dual N-Channel |
| Operating Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Halogen-free | Compliant |
No datasheet is available for this part.
