The TSM320N03CX RFG is an N-Channel enhancement mode power field effect transistor produced using Taiwan Semiconductor's proprietary planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Temp Range-55 to 150°C
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Technical Specifications
Taiwan Semiconductor TSM320N03CX RFG technical specifications.
General
| Drain-Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 32A |
| Rds On (Max) @ Vgs, Id | 6 @ 10V, 32AmΩ |
| Gate Threshold Voltage (Vgs(th)) | 1.2 (Typ)V |
| Total Gate Charge (Qg) | 34 @ 10VnC |
| Operating Temperature | -55 to 150°C |
| Input Capacitance (Ciss) | 1650pF |
Compliance
| RoHS | Compliant |
| Halogen-free | Compliant |
| Pb-free | Yes |
Datasheet
Taiwan Semiconductor TSM320N03CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM320N03CX RFG to view detailed technical specifications.
No datasheet is available for this part.