The TSM4800N15CX6 is a single N-channel power MOSFET designed for high efficiency and high-density applications. It features advanced trench process technology to achieve ultra-low on-resistance. The device is optimized for power management and load switch applications in computing and industrial sectors.
Temp Range-55 to +150°C
Power2W
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Technical Specifications
Taiwan Semiconductor TSM4800N15CX6 RFG technical specifications.
General
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 4.3A |
| Drain-Source On-State Resistance (Max) | 80mOhms |
| Gate-Source Voltage | ±20V |
| Total Gate Charge | 21nC |
| Power Dissipation | 2W |
| Operating Temperature Range | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| Moisture Sensitivity Level | MSL-1 |
Datasheet
Taiwan Semiconductor TSM4800N15CX6 RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM4800N15CX6 RFG to view detailed technical specifications.
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