This N-channel power MOSFET is rated for 60 V drain-to-source voltage and 66 A continuous drain current. It uses advanced trench technology to achieve a maximum 7.3 mΩ on-resistance at 10 V gate drive. Typical total gate charge is 81 nC. The device is supplied in a TO-252 (DPAK) 3-pin package with gate, drain, and source terminals.
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Taiwan Semiconductor TSM60N06CP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 66A |
| On-Resistance Max | 7.3 @ VGS = 10 VmΩ |
| Total Gate Charge Typ | 81nC |
| Technology | Advanced Trench |
| Package | TO-252 (DPAK) |
| Pin Count | 3 |
| Pin 1 Function | Gate |
| Pin 2 Function | Drain |
| Pin 3 Function | Source |
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