The TSM650P02CX RFG is a 20V P-Channel power MOSFET utilizing advanced Trench technology for low on-resistance and efficient power switching. It is designed for single-configuration applications requiring fast switching and is specifically suited for -1.8V low-voltage gate drive applications. The device provides a continuous drain current of -4.1A and is packaged in a space-saving SOT-23 surface mount package. It features low gate charge and excellent thermal performance for enhanced reliability in power management and battery-operated circuits.
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| Drain-Source Voltage (Vdss) | -20V |
| Continuous Drain Current (Id) | -4.1A |
| Drain-Source On-State Resistance (RDS(on)) | 52 (Typ) / 65 (Max) @ VGS = -4.5VmOhms |
| Gate-Source Voltage (Vgs) | ±10V |
| Gate Threshold Voltage (Vgs(th)) | -0.6V |
| Total Gate Charge (Qg) | 6.4nC |
| Power Dissipation (Pd) | 1.56W |
| Operating Junction Temperature Range | -55 to +150°C |
| Input Capacitance (Ciss) | 515pF |
| Rohs Status | Compliant (ROHS3) |
| Halogen-free | Yes (IEC 61249-2-21) |
