The TSM680P06DPQ56 is a P-channel power MOSFET designed for high efficiency and fast switching. It features improved dV/dt capability and reliability meeting AEC-Q101 requirements. The device is manufactured using a halogen-free process and is RoHS compliant, suitable for applications in motor drives, power tools, and LED lighting.
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| Drain-Source Voltage (Vds) | -60V |
| Continuous Drain Current (Id) | -14.5A |
| Drain-Source Resistance (Rds On) Max | 68mOhms |
| Gate-Source Voltage (Vgs) | ±20V |
| Power Dissipation (Pd) | 20.5W |
| Operating Temperature Range | -55 to +150°C |
| Total Gate Charge (Qg) | 18nC |
| Gate-Source Threshold Voltage (Vgs th) | -1.4V |
| RoHS | Compliant |
| Halogen-free | Yes |
| Aec-q101 | Reliability meets AEC-Q101 requirements |
Download the complete datasheet for Taiwan Semiconductor TSM680P06DPQ56 RLG to view detailed technical specifications.
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