MOSFET 650V 3Amp N Channel Pwr MOSFET Isolated
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Taiwan Semiconductor TSM7N65CIC0 technical specifications.
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.2R |
| Fall Time | 19ns |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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