MOSFET 650V 3Amp N Channel Power MOSFET
Taiwan Semiconductor TSM7N65CZC0 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.2R |
| Fall Time | 19ns |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
