The TSM80N950CP ROG is an N-Channel enhancement mode power MOSFET produced using Taiwan Semiconductor's proprietary planar stripe and DMOS technology. This advanced technology is tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Power114W
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Technical Specifications
Taiwan Semiconductor TSM80N950CP ROG technical specifications.
General
| Drain-Source Voltage | 800V |
| Continuous Drain Current | 8A |
| Drain-Source On-State Resistance (Max) | 0.95Ω |
| Total Gate Charge | 26nC |
| Power Dissipation | 114W |
| Operating Junction Temperature | -55 to +150°C |
| Gate-Source Voltage | ±30V |
Compliance
| RoHS | Compliant |
| Halogen-free | Compliant |
| Pb-free | Yes |
Datasheet
Taiwan Semiconductor TSM80N950CP ROG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM80N950CP ROG to view detailed technical specifications.
No datasheet is available for this part.