The TSM850N06CX RFG is an N-Channel power MOSFET produced using advanced trench technology. It is designed for high efficiency and reliability in low-voltage applications, such as DC-DC converters, load switches, and power management. It features low on-resistance and is optimized for low gate charge to minimize switching losses.
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Technical Specifications
Taiwan Semiconductor TSM850N06CX RFG technical specifications.
General
| Drain-Source Voltage (Vdss) | 60V |
| Continuous Drain Current (Id) | 1.4A |
| Drain-Source On-Resistance (Rds(on)) Max | 850mOhms |
| Gate-Source Voltage (Vgs) | ±20V |
| Total Gate Charge (Qg) | 1.3nC |
| Operating Junction Temperature | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Taiwan Semiconductor TSM850N06CX RFG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM850N06CX RFG to view detailed technical specifications.
No datasheet is available for this part.