The TSM900N10CP is an N-Channel Power MOSFET utilizing advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications including power management, DC-DC converters, and load switching.
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Technical Specifications
Taiwan Semiconductor TSM900N10CP ROG technical specifications.
General
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 15A |
| Static Drain-Source On-Resistance (RDS(on) max) | 90mΩ |
| Gate-Source Voltage (VGS) | ±20V |
| Gate Charge (Qg) | 12.8nC |
| Operating Junction Temperature | -55 to +150°C |
| Pulsed Drain Current | 60A |
Compliance
| RoHS | Compliant |
| Halogen-free | Compliant |
| REACH | Compliant |
Datasheet
Taiwan Semiconductor TSM900N10CP ROG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM900N10CP ROG to view detailed technical specifications.
No datasheet is available for this part.