Texas Instruments
SI4410DY-T1-REVA
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N Trans MOSFET N-CH 30V 10A 8-Pin SOIC N
PackageSO
Power2.5W
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Technical Specifications
Texas Instruments SI4410DY-T1-REVA technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
Compliance
| RoHS | Not Compliant |
Datasheet
Texas Instruments SI4410DY-T1-REVA Datasheet
Download the complete datasheet for Texas Instruments SI4410DY-T1-REVA to view detailed technical specifications.
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