The Toshiba 1SS302(T5LDNGIK,F) is a surface mount switching diode with a maximum continuous forward current of 100mA and a peak reverse repetitive voltage of 85V. It has a maximum power dissipation of 100mW and an operating temperature range of -55°C to 125°C. The diode is packaged in a USM package with a seated plane height of 1.1mm and a mounted height of 0.9mm. It is a dual series configuration and is compliant with Jedec SOT-323 standards.
Toshiba 1SS302(T5LDNGIK,F) technical specifications.
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Type | Switching Diode |
| Configuration | Dual Series |
| Peak Reverse Repetitive Voltage | 85V |
| Maximum Continuous Forward Current | 0.1A |
| Peak Non-Repetitive Surge Current | 2A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 4ns |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Operating Junction Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541100070 |
| Schedule B | 8541100070 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 1SS302(T5LDNGIK,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.