N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 10A continuous drain current. This single-element transistor utilizes pi-MOS V process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key electrical characteristics include a maximum drain-source on-resistance of 750 mOhm at 10V, typical gate charge of 45 nC, and typical input capacitance of 2040 pF. Maximum power dissipation is rated at 45W, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2843(SIND) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS V |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 750@10VmOhm |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Typical Gate Charge @ 10V | 45nC |
| Typical Input Capacitance @ Vds | 2040@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2843(SIND) Datasheet
Download the complete datasheet for Toshiba 2SK2843(SIND) to view detailed technical specifications.
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