The 2SK3797(QM) is a Toshiba N-CHANNEL MOSFET with a maximum drain to source breakdown voltage of 600V and a continuous drain current of 13A. It is packaged in a TO-220-3 package and is designed for through hole mounting. The device has a maximum power dissipation of 50W and an operating temperature range of -55°C to 150°C. The 2SK3797(QM) has a gate to source voltage of 30V and a drain to source resistance of 430mR. It also features a fall time of 215ns and a turn-off delay time of 50ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Toshiba 2SK3797(QM) technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 430mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 215ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 430mR |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK3797(QM) Datasheet
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