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Technical Specifications
Toshiba 4N32(SHORT,F) technical specifications.
General
Package/Case
PDIP
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1V
Current Transfer Ratio
500%
Forward Current
80mA
Input Type
DC
Isolation Voltage
2.5kV
Max Collector Current
100mA
Max Input Current
80mA
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Max Output Voltage
30V
Max Power Dissipation
250mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Output Current per Channel
100mA
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
250mW
Radiation Hardening
No
Reverse Breakdown Voltage
3V
Compliance
RoHS
Compliant
Datasheet
Toshiba 4N32(SHORT,F) Datasheet
Download the complete datasheet for Toshiba 4N32(SHORT,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.