General purpose photocoupler with transistor output in a 6-pin DIP package. Features 2.5kV isolation voltage, 10mA input current, and 100mA maximum output current. Offers a 30V collector-emitter voltage and 300mV collector-emitter saturation voltage. Operates across a -55°C to 100°C temperature range. Through-hole mount design.
PackageDIP
MountingThrough Hole
Power300mW
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Technical Specifications
Toshiba 4N35(SHORT,F) technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 300mV |
| Current Transfer Ratio | 100% |
| Forward Current | 60mA |
| Input Current | 10mA |
| Input Type | DC |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Output Voltage | 30V |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 100mA |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 4N35(SHORT,F) Datasheet
Download the complete datasheet for Toshiba 4N35(SHORT,F) to view detailed technical specifications.
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