The GT60M303(S1MAT-R1) is a single insulated gate bipolar transistor (IGBT) from Toshiba, packaged in a TO-3PL through-hole package. It has a maximum collector-emitter voltage of 900V and a maximum continuous collector current of 60A. The device can dissipate up to 170W of power and operates within a temperature range of -55°C to 150°C. It is suitable for high-power applications in industrial and automotive systems.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba GT60M303(S1MAT-R1) technical specifications.
General
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 900V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Continuous Collector Current | 60A |
| Maximum Power Dissipation | 170000mW |
| Typical Collector Emitter Saturation Voltage | 2.1V |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba GT60M303(S1MAT-R1) Datasheet
Download the complete datasheet for Toshiba GT60M303(S1MAT-R1) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.