The HN7G06FU-A(TE85L,F is a PNP transistor with a minimum current gain of 300 and a gain bandwidth product of 130MHz. It can withstand a collector-emitter voltage of up to -12V and a collector base voltage of up to -15V. The transistor has a maximum power dissipation of 200mW and is available in a tape and reel packaging with 3000 units per package.
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Toshiba HN7G06FU-A(TE85L,F technical specifications.
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | -12V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 300 |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Resistance | 47000R |
| RoHS | Compliant |
Download the complete datasheet for Toshiba HN7G06FU-A(TE85L,F to view detailed technical specifications.
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