The HN7G08FE-A(TE85L,F is a PNP transistor with a gain bandwidth product of 130MHz and a maximum power dissipation of 100mW. It has a collector-emitter voltage maximum of -12V and an emitter base voltage of -5V. The transistor is packaged in tape and reel quantities of 4000. It is suitable for use in applications where a high gain bandwidth product is required.
Toshiba HN7G08FE-A(TE85L,F technical specifications.
| Collector Base Voltage (VCBO) | -15V |
| Collector-emitter Voltage-Max | -12V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 300 |
| Max Power Dissipation | 100mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS | Compliant |
No datasheet is available for this part.
