Transistors Bipolar - BJT Vceo=50V Vds=30V Ic=100mA Id=100mA
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Toshiba HN7G09FE(TE85LF) technical specifications.
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 10V |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 80 |
| Max Power Dissipation | 100mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS | Not Compliant |
No datasheet is available for this part.
