The Toshiba S2000N(LBSONY,F,M) is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 1500V and a maximum power dissipation of 50W. It is packaged in a TO-3P(HIS) package with a seated plane height of 29mm and a weight of 5.5g. The transistor is suitable for use in applications with a maximum operating temperature of 150°C and is mounted through a hole. The device has a minimum DC current gain of 10 at 1A and 5V, and a maximum transition frequency of 2MHz.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba S2000N(LBSONY,F,M) technical specifications.
General
| Package/Case | TO-3P(HIS) |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 16.5 |
| Seated Plane Height (mm) | 29 |
| Package Weight (g) | 5.5 |
| Mounting | Through Hole |
| Jedec | SC-65 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 1500V |
| Maximum DC Collector Current | 8A |
| Maximum Power Dissipation | 50000mW |
| Material | Si |
| Minimum DC Current Gain | 10@1A@5V|[email protected]@5V |
| Maximum Transition Frequency | 2(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba S2000N(LBSONY,F,M) Datasheet
Download the complete datasheet for Toshiba S2000N(LBSONY,F,M) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.