The SSM6J08FU(TE85L,F) is a P-CHANNEL MOSFET from Toshiba with a drain to source breakdown voltage of -20V and a continuous drain current of 1.3A. It has a maximum power dissipation of 300mW and a drain to source resistance of 140mR. The device is mounted in a surface mount package and is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power300mW
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Technical Specifications
Toshiba SSM6J08FU(TE85L,F) technical specifications.
General
| Continuous Drain Current (ID) | 1.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 370pF |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba SSM6J08FU(TE85L,F) Datasheet
Download the complete datasheet for Toshiba SSM6J08FU(TE85L,F) to view detailed technical specifications.
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