1Gbit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
Toshiba TC58BVG0S3HBAI4 technical specifications.
| Access Time-Max | 120us |
| Package/Case | TFBGA |
| Data Bus Width | 8b |
| Interface | Parallel |
| Length | 11mm |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 1Gb |
| Memory Type | EEPROM, NAND |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.7V |
| Mount | Surface Mount |
| Number of Words | 2048 |
| Packaging | Tray |
| RoHS Compliant | No |
| Series | Benand™ |
| Width | 9mm |
| RoHS | Not Compliant |
No datasheet is available for this part.
