The Toshiba TC58NYG1S3HBAI6 is a 2Gb parallel EEPROM/NAND flash memory device. It operates at a supply voltage of 1.8V and is packaged in a VFBGA package. The device is rated to operate over a temperature range of -40°C to 85°C. It is not radiation hardened and is not RoHS compliant.
Checking distributor stock and pricing after the page loads.
| Package/Case | VFBGA |
| Density | 2Gb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Memory Type | EEPROM, NAND, |
| Min Operating Temperature | -40°C |
| Operating Supply Voltage | 1.8V |
| Packaging | Tray |
| Page Size | 2048B |
| Radiation Hardening | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
