This device is a single N-channel power MOSFET for switching voltage regulator applications. It uses Toshiba's DTMOSⅥ process and is housed in a 3-pin through-hole TO-247 package. The MOSFET is rated for 650 V drain-source voltage, 37 A continuous drain current, and 270 W power dissipation at Tc = 25 °C. It features 52 mΩ typical drain-source on-resistance, 68 nC typical total gate charge, and 135 ns typical reverse recovery time. The channel temperature range extends to 150 °C, and the orderable part is listed as RoHS compatible.
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Toshiba TK068N65Z5,S1F technical specifications.
| Application Scope | Switching Voltage Regulators |
| Polarity | N-ch |
| Generation | DTMOSⅥ |
| Internal Connection | Single |
| Package | TO-247 |
| Mounting | Through Hole |
| Pin Count | 3 |
| Dimensions | 15.94×20.95×5.02mm |
| Drain-Source Voltage | 650V |
| Gate-Source Voltage | ±30V |
| Drain Current (DC) | 37A |
| Drain Current (Pulsed) | 148A |
| Power Dissipation | 270W |
| Single-Pulse Avalanche Energy | 730mJ |
| Channel Temperature | 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance, Junction-to-Case | 0.462°C/W |
| Thermal Resistance, Junction-to-Ambient | 50°C/W |
| Gate Threshold Voltage | 3.5 to 4.5V |
| Drain-Source On-Resistance | 0.052 typ, 0.068 maxΩ |
| Input Capacitance | 3765pF |
| Reverse Transfer Capacitance | 3.0pF |
| Output Capacitance | 92pF |
| Effective Output Capacitance (Energy Related) | 145pF |
| Effective Output Capacitance (Time Related) | 970pF |
| Gate Resistance | 2.8Ω |
| Rise Time | 51ns |
| Turn-On Time | 92ns |
| Fall Time | 3.5ns |
| Turn-Off Time | 115ns |
| Total Gate Charge | 68nC |
| Gate-Source Charge | 23nC |
| Gate-Drain Charge | 22nC |
| Diode Forward Voltage | 1.7 maxV |
| Reverse Recovery Time | 135 typ, 216 maxns |
| Reverse Recovery Charge | 0.74µC |
| Peak Reverse Recovery Current | 11A |
| RoHS | Yes |
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