This device is an N-channel power MOSFET rated for 650 V drain-to-source voltage and 30 A continuous drain current at 25°C. It is housed in a through-hole TO-247-3 package and is specified for up to 230 W power dissipation at case temperature. The MOSFET has a maximum on-resistance of 90 mOhm at 15 A and 10 V gate drive, with a maximum gate charge of 47 nC at 10 V. Its maximum gate threshold voltage is 4 V at 1.27 mA, the maximum gate-source voltage is ±30 V, and the maximum operating temperature is 150°C.
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Toshiba TK090N65Z,S1F technical specifications.
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | 90 @ 15A, 10VmOhm |
| Drive Voltage | 10V |
| Vgs(th) (Max) @ Id | 4 @ 1.27mAV |
| Gate Charge (Qg) (Max) @ Vgs | 47 @ 10VnC |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 230W |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Operating Temperature | 150°C |
| RoHS | ROHS3 Compliant |
| REACH | REACH Unaffected |
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