Toshiba TK12P60W,RVQ(S N-channel MOSFET Transistor, 11.5 A, 600 V, 3-Pin DPAK
Toshiba TK12P60W,RVQ(S technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11.5A |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 890pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 45ns |
| Width | 6.1mm |
| RoHS | Compliant |
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