N-channel power MOSFET uses DTMOSⅣ-H technology for high-efficiency switching voltage regulator applications. The device is rated for 600 V drain-source voltage, 25 A drain current, and 180 W power dissipation. Maximum drain-source on-resistance is 140 mΩ at 10 V gate drive, with typical 2400 pF input capacitance and 60 nC total gate charge. The through-hole TO-247 package has three pins and measures 15.94 mm by 20.95 mm by 5.02 mm.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba TK25N60X5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| MOSFET polarity | N-channel |
| Technology generation | DTMOSⅣ-H |
| Internal connection | Single |
| Drain-source voltage | 600V |
| Gate-source voltage | +/-30V |
| Drain current | 25A |
| Power dissipation | 180W |
| Gate threshold voltage maximum | 4.5V |
| Gate threshold voltage minimum | 3.0V |
| Drain-source on-resistance maximum | 140 at |VGS|=10 VmΩ |
| Input capacitance typical | 2400pF |
| Total gate charge typical | 60 at VGS=10 VnC |
| Reverse recovery time typical | 120ns |
| Reverse recovery charge typical | 600nC |
| Pins | 3 |
| Mounting | Through Hole |
| Package dimensions | 15.94 x 20.95 x 5.02mm |
| RoHS | Compatible product(s) available |
| Reach Svhc | Certificate available, Apr 2026 |
Download the complete datasheet for Toshiba TK25N60X5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
