The TK40A06N1,S4X is a TO-220-3 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 40A and a maximum drain to source voltage of 60V. The device has a maximum power dissipation of 30W and a drain to source resistance of 8.4 milliohms. It is suitable for through hole mounting and is available in a rail/Tube packaging with 50 units per package.
Toshiba TK40A06N1,S4X technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 8.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10.4mR |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.211644oz |
| RoHS | Compliant |
Download the complete datasheet for Toshiba TK40A06N1,S4X to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.