This N-channel power MOSFET uses Toshiba's U-MOSⅨ-H process and is supplied in a TO-220 package. It is rated for 60 V drain-source voltage, 98 A drain current at the silicon limit, and 87 W power dissipation at Tc = 25 °C. Typical drain-source on-resistance is 3.9 mΩ at 10 V gate drive and 5.9 mΩ at 4.5 V. Typical total gate charge is 36 nC, gate switch charge is 11 nC, and output charge is 32 nC. It is intended for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers.
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Toshiba TK5R1E06PL technical specifications.
| Channel type | N-channel |
| Drain-source voltage | 60V |
| Drain current (DC, Tc=25°C) | 70A |
| Drain current (DC, silicon limit) | 98A |
| Drain current (pulsed) | 300A |
| Power dissipation | 87W |
| Single-pulse avalanche energy | 28mJ |
| Single-pulse avalanche current | 70A |
| Channel temperature | 175°C |
| Gate threshold voltage | 1.5 to 2.5V |
| Drain-source on-resistance (typ, Vgs=10V) | 3.9mΩ |
| Drain-source on-resistance (max, Vgs=10V) | 5.1mΩ |
| Drain-source on-resistance (typ, Vgs=4.5V) | 5.9mΩ |
| Drain-source on-resistance (max, Vgs=4.5V) | 8.8mΩ |
| Input capacitance | 2380pF |
| Reverse transfer capacitance | 50pF |
| Output capacitance | 470pF |
| Total gate charge | 36nC |
| Gate-source charge 1 | 9.0nC |
| Gate-drain charge | 6.5nC |
| Gate switch charge | 11nC |
| Output charge | 32nC |
| Reverse recovery time | 40ns |
| Reverse recovery charge | 38nC |
| RoHS | Yes |
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