The TLP181(GB-TPR,T) is a single PNP transistor with a collector emitter saturation voltage of 400mV and a collector emitter voltage of 80V. It has a current transfer ratio of 600% and a forward current of 50mA. This transistor is designed for surface mount applications and can operate at temperatures between -25°C and 110°C. It is available in tape and reel packaging.
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP181(GB-TPR,T) technical specifications.
General
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Input Type | DC |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TLP181(GB-TPR,T) Datasheet
Download the complete datasheet for Toshiba TLP181(GB-TPR,T) to view detailed technical specifications.
No datasheet is available for this part.