The TLP181GR-TPRT is a single-element surface mount bipolar junction transistor with a maximum operating temperature of 110°C and a minimum operating temperature of -25°C. It has a collector emitter saturation voltage of 400mV and a collector emitter voltage of 80V. The transistor can handle a maximum power dissipation of 200mW and has a forward current of 50mA. It is packaged in tape and reel format and is suitable for DC input applications.
Voltage5V
MountingSurface Mount
Power200mW
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Technical Specifications
Toshiba TLP181GR-TPRT technical specifications.
General
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Input Type | DC |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 5V |
| Voltage | 5V |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba TLP181GR-TPRT Datasheet
Download the complete datasheet for Toshiba TLP181GR-TPRT to view detailed technical specifications.
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