The TLP281GB-TPFT is a DC input transistor with a collector emitter saturation voltage of 400mV and a maximum collector current of 50mA. It has a maximum operating temperature range of -55°C to 100°C and a maximum power dissipation of 200mW. The transistor is packaged in a SOP package and is available on tape and reel. It is not radiation hardened.
PackageSOP
Quick Jump:
Technical Specifications
Toshiba TLP281GB-TPFT technical specifications.
General
| Package/Case | SOP |
| Collector Emitter Saturation Voltage | 400mV |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP281GB-TPFT Datasheet
Download the complete datasheet for Toshiba TLP281GB-TPFT to view detailed technical specifications.
No datasheet is available for this part.