The Toshiba TLP291(GB,E) is a single-channel optocoupler with a collector-emitter voltage of 80V and a forward current of 50mA. It features a saturation voltage of 300mV and an isolation voltage of 3.75kV. The device is packaged in a surface-mount SOIC package and has a maximum operating temperature of 110°C and a minimum operating temperature of -55°C.
PackageSOIC
MountingSurface Mount
Power200mW
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Toshiba TLP291(GB,E) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Toshiba TLP291(GB,E) technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 300mV |
| Current Transfer Ratio | 400% |
| Forward Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 3.75kV |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 80V |
| Package Quantity | 175 |
| Packaging | Bulk |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP291(GB,E) Datasheet
Download the complete datasheet for Toshiba TLP291(GB,E) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
