The TLP352 is a photocoupler in a DIP8 package consisting of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 °C. It features an internal Faraday shield for Common-mode transient immunity of ±20 kV/µs and a totem-pole output. Ideal for IGBT and power MOSFET gate drive in industrial inverters, MOSFET/IGBT gate drivers, induction cooktops, and home appliances. The TLP352F variant offers enhanced creepage and clearance distances for safety standards.
Temp Range-40 to 125°C
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Technical Specifications
Toshiba TLP352(D4,F) technical specifications.
General
Max Operating Temperature
125
Min Operating Temperature
-40
Supply Voltage-Nom
30
Number of Elements
1
Power Dissipation-Max
0.26
Buffer Logic Type
totem pole output
Output Peak Current
±2.5A (max)
Operating Temperature
-40 to 125°C
Threshold Input Current (max)
5mA
Propagation Delay Time (max)
200ns
Common-mode Transient Immunity (min)
±20kV/µs
Isolation Voltage (min)
3750Vrms
LED Input Forward Current (Absolute Max)
20mA
Output Power Dissipation (Absolute Max)
260mW
Minimum Creepage Distance (TLP352)
7.0mm
Minimum Creepage Distance (TLP352F)
8.0mm
Minimum Clearance Distance (TLP352)
7.0mm
Minimum Clearance Distance (TLP352F)
8.0mm
Input Capacitance (Typ @25C, 0V, 1MHz)
95pF
Operating Frequency (max)
50kHz
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Ul-approved
UL1577, File No.E67349
Cul-approved
CSA Component Acceptance Service No.5A File No.E67349
Vde-approved
EN60747-5-5 (Designate Option (D4) for approved type)
Datasheet
Toshiba TLP352(D4,F) Datasheet
Download the complete datasheet for Toshiba TLP352(D4,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.