The TLP521-4GBFT is a DC input transistor with a collector emitter saturation voltage of 400mV and a maximum collector current of 50mA. It is packaged in a PDIP and has a maximum operating temperature of 85°C and a minimum operating temperature of -55°C. The transistor can dissipate a maximum power of 150mW. It is not radiation hardened.
Toshiba TLP521-4GBFT technical specifications.
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Input Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS | Compliant |
No datasheet is available for this part.
