The TLP621 is a single transistor with a collector emitter saturation voltage of 400mV and a collector emitter voltage of 55V. It has a current transfer ratio of 600% and a forward current of 50mA. The device is packaged in a PDIP and is rated for operation between -25°C and 85°C. It can dissipate up to 250mW of power and has a reverse breakdown voltage of 5V.
PackagePDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Toshiba TLP621(D4-GB-LF2,F technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 55V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 250mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP621(D4-GB-LF2,F Datasheet
Download the complete datasheet for Toshiba TLP621(D4-GB-LF2,F to view detailed technical specifications.
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