The TPC8111(Q) is a surface mount power MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.9W and can handle a continuous drain current of 11A. The device has a gate to source voltage of 20V and an input capacitance of 5.71nF. It is available in a SOP package with dimensions of 5mm in length, 4.4mm in width, and 1.5mm in height.
PackageSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPC8111(Q) technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 5.71nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TPC8111(Q) Datasheet
Download the complete datasheet for Toshiba TPC8111(Q) to view detailed technical specifications.
No datasheet is available for this part.
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