TPC8122(TE12L,Q)

P-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 12A continuous drain current. This single-element silicon transistor utilizes U-MOS V process technology and is housed in an 8-pin SOP (Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum drain-source on-resistance of 8 mΩ at 10V, typical gate charge of 62 nC at 10V, and typical input capacitance of 2450 pF at 10V. The plastic package measures 5.5mm x 4.4mm x 1.5mm, supporting a maximum power dissipation of 1900 mW across an operating temperature range of -55°C to 150°C.