N-channel enhancement mode Power MOSFET featuring a 20V drain-source voltage and 5A continuous drain current. This dual common drain dual source configured silicon transistor is housed in an 8-pin TSSOP package with gull-wing leads for surface mounting. Key specifications include a maximum drain-source resistance of 30mOhm at 4V, typical gate charge of 15nC at 5V, and typical input capacitance of 1280pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTSSOP
MountingSurface Mount
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Technical Specifications
Toshiba TPCS8210(T2LPWL,M) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | TSSOP |
| Package Description | Thin Shrink Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.3(Max) |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 0.85 |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Common Drain Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 30@4VmOhm |
| Typical Gate Charge @ Vgs | 15@5VnC |
| Typical Input Capacitance @ Vds | 1280@10VpF |
| Maximum Power Dissipation | 1100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba TPCS8210(T2LPWL,M) Datasheet
Download the complete datasheet for Toshiba TPCS8210(T2LPWL,M) to view detailed technical specifications.
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