N-channel power MOSFET for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers. The device uses Toshiba's U-MOSⅨ-H process and is housed in an 8-pin SOP Advance surface-mount package measuring 5.0 × 6.0 × 0.95 mm. It is rated for 30 V drain-source voltage, 280 A drain current, and 132 W power dissipation. Maximum drain-source on-resistance is 1.29 mΩ at 4.5 V gate drive and 0.92 mΩ at 10 V, with 5800 pF typical input capacitance and 81 nC typical total gate charge. Channel temperature range extends to 175 °C, and storage temperature range is -55 °C to 175 °C.
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| Polarity | N-ch |
| Generation | U-MOSⅨ-H |
| Internal connection | Single |
| Drain-source voltage | 30V |
| Gate-source voltage | ±20V |
| Drain current | 280A |
| Power dissipation | 132W |
| Gate threshold voltage min | 1.1V |
| Gate threshold voltage max | 2.1V |
| Drain-source on-resistance max @ VGS=4.5V | 1.29mΩ |
| Drain-source on-resistance max @ VGS=10V | 0.92mΩ |
| Input capacitance typ | 5800pF |
| Reverse transfer capacitance typ | 190pF |
| Output capacitance typ | 1750pF |
| Total gate charge typ | 81nC |
| Output charge typ | 51nC |
| Reverse recovery time typ | 46ns |
| Reverse recovery charge typ | 44nC |
| Channel temperature max | 175°C |
| Storage temperature range | -55 to 175°C |
| Pins | 8 |
| Mounting | Surface Mount |
| Package dimensions | 5.0 × 6.0 × 0.95mm |
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