The TRS8E65H is a 3rd generation Silicon Carbide (SiC) Schottky Barrier Diode (SBD) designed for high-efficiency power conversion. It features low forward voltage, high-speed switching with zero reverse recovery time, and a high operating junction temperature of 175°C. This device is optimized for power factor correction (PFC) circuits, solar inverters, and DC-DC converters.
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Technical Specifications
Toshiba TRS8E65H technical specifications.
General
| Repetitive Peak Reverse Voltage (Vrrm) | 650V |
| Average Forward Current (If) | 8A |
| Forward Voltage (Vf) Max | 1.35V |
| Total Capacitive Charge (Qc) | 6.5nC |
| Reverse Recovery Time (trr) | 0ns |
| Operating Junction Temperature Max | 175°C |
| Peak Non-Repetitive Forward Surge Current (Ifsm) | 65A |
Compliance
| RoHS | Compliant |
| Phthalates | Compliant |
Datasheet
Toshiba TRS8E65H Datasheet
Download the complete datasheet for Toshiba TRS8E65H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.