The TRS8E65H is a 3rd generation Silicon Carbide (SiC) Schottky Barrier Diode (SBD) featuring low forward voltage and high-speed switching. It is designed for high-efficiency power conversion applications including Power Factor Correction (PFC) and DC-DC converters.
Quick Jump:
Technical Specifications
Toshiba TRS8E65H,S1Q technical specifications.
General
| Repetitive Peak Reverse Voltage | 650V |
| Average Forward Current | 8A |
| Forward Voltage (Typ.) | 1.2V |
| Total Capacitive Charge (Typ.) | 17nC |
| Operating Junction Temperature Max | 175°C |
| Reverse Current (Max) | 70µA |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
Datasheet
Toshiba TRS8E65H,S1Q Datasheet
Download the complete datasheet for Toshiba TRS8E65H,S1Q to view detailed technical specifications.
No datasheet is available for this part.