The TRS8E65H is a 3rd generation Silicon Carbide (SiC) Schottky Barrier Diode (SBD) featuring low forward voltage and high-speed switching. It is designed for high-efficiency power conversion applications including Power Factor Correction (PFC) and DC-DC converters.
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| Repetitive Peak Reverse Voltage | 650V |
| Average Forward Current | 8A |
| Forward Voltage (Typ.) | 1.2V |
| Total Capacitive Charge (Typ.) | 17nC |
| Operating Junction Temperature Max | 175°C |
| Reverse Current (Max) | 70µA |
| RoHS | Compliant |
| Halogen Free | Yes |
